kw.\*:("Al. Fluid flows; Al. Growth models; Al. Mass transfer; A2. Growth from vapor; A3. Hydride vapor-phase epitaxy; B2. Semiconducting III-V materials")
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Modeling, optimization, and growth of GaN in a vertical halide vapor-phase epitaxy bulk reactorHEMMINGSSON, C; POZINA, G; HEUKEN, M et al.Journal of crystal growth. 2008, Vol 310, Num 5, pp 906-910, issn 0022-0248, 5 p.Conference Paper
